北京航空航天大學(xué)

導(dǎo)師詳細(xì)信息

姓名：黃安平

性別：男

出生年份：1974

職稱(chēng)：教授

院系：物理科學(xué)與核能工程學(xué)院

首次聘任導(dǎo)師時(shí)間：2013

現(xiàn)聘任導(dǎo)師一級(jí)學(xué)科名稱(chēng)：物理學(xué)

現(xiàn)聘任導(dǎo)師二級(jí)學(xué)科名稱(chēng)：凝聚態(tài)物理

聘任在第二學(xué)科培養(yǎng)博士生專(zhuān)業(yè)名稱(chēng)：無(wú)

聘任在自主設(shè)置學(xué)科培養(yǎng)博士生專(zhuān)業(yè)名稱(chēng)：無(wú)

主要研究方向及特色：1.半導(dǎo)體薄膜與器件物理，2.信息功能材料與仿生智能器件，3.半導(dǎo)體材料表面改性與生物物理

電子信箱：aphuang@buaa.edu.cn

辦公電話：010-82338779

辦公地點(diǎn)：主樓436

通信地址：北京航空航天大學(xué)物理系

個(gè)人簡(jiǎn)介：

黃安平：男，安徽安慶人，博士，教授，博士生導(dǎo)師，美國(guó)Stanford大學(xué)電子工程系訪問(wèn)學(xué)者，2008年度教育部新世紀(jì)優(yōu)秀人才，北京航空航天大學(xué)“我愛(ài)我?guī)?rdquo;十佳教師（2011年），連續(xù)榮獲北京航空航天大學(xué)優(yōu)秀研究生指導(dǎo)教師稱(chēng)號(hào)（2011年、2010年），擔(dān)任3rd IEEE International Nano Electronics Conference (INEC-2010)納米電子學(xué)分會(huì)主席等。長(zhǎng)期從事新型半導(dǎo)體薄膜物理與器件研究，在電子薄膜材料的合成制備、物性分析與電子器件的性能研究等方面積累了一定的工作經(jīng)驗(yàn)。目前承擔(dān)兩門(mén)北京市精品課程的教學(xué)工作，已發(fā)表SCI檢索學(xué)術(shù)論文50余篇，英文論著(Book Chapter)2篇，國(guó)際會(huì)議論文11篇，國(guó)際會(huì)議大會(huì)邀請(qǐng)報(bào)告多次。部分研究成果被全球最大的專(zhuān)業(yè)電信咨詢(xún)公司之一Frost & Sullivan公司在其"Technical Insights"網(wǎng)站上以“新技術(shù)亮點(diǎn)”為題專(zhuān)門(mén)撰文評(píng)述。

教學(xué)、人才培養(yǎng)及科研項(xiàng)目情況：

現(xiàn)講授本科生《大學(xué)物理學(xué)》等課程。主持承擔(dān)的科研項(xiàng)目主要有國(guó)家自然科學(xué)基金、教育部新世紀(jì)人才基金、教育部博士點(diǎn)基金、藍(lán)天新秀基金等。目前正主持承擔(dān)國(guó)家自然科學(xué)基金面上項(xiàng)目2項(xiàng)，現(xiàn)有研究生5名，已畢業(yè)研究生2人，均獲得了北京航空航天大學(xué)優(yōu)秀研究生（校級(jí)）榮譽(yù)稱(chēng)號(hào)，連續(xù)榮獲北京航空航天大學(xué)優(yōu)秀研究生指導(dǎo)教師稱(chēng)號(hào)。

每年擬招收博士研究生1-2人，碩士研究生2-3人。

熱誠(chéng)歡迎有志于從事半導(dǎo)體薄膜與仿生智能器件相關(guān)研究的同學(xué)加入我們的團(tuán)隊(duì)。

研究方向：

現(xiàn)主要從事半導(dǎo)體薄膜與器件物理，信息功能材料與仿生智能器件，半導(dǎo)體材料表面改性與生物物理等方面的研究工作。

部分研究成果（Selected）：

1. X. H. Zheng, A. P. Huang*, Z. S. Xiao, X. Y. Liu, M. Wang, Z. W. Wu, and Paul K. Chu, Diffusion Behavior of Dual Capping Layers in TiN/LaN/AlN/HfSiOx/Si Stack, Applied Physics Letters 99 (2011) 131914;

2. A. P. Huang*, X. H. Zheng, Z. S. Xiao, Z. C. Yang, M. Wang, and Paul K. Chu Flat Band Voltage Shift in P-Channel Metal Oxide Semiconductor Field Effect Transistors, Chinese Physics B 20 (2011) 097303;

3. Z. C. Yang, A. P. Huang*, X. H. Zheng, Z. S. Xiao, X. Y. Liu, X. W. Zhang, Paul K. Chu and W. W. Wang, Fermi-level pinning at metal/high-k interface influenced by electron state density of metal gate: IEEE Electron Device Letters 31 (2010) 1101-1103;

4. X. H. Zheng, A. P. Huang*, Z. S. Xiao, Z. C. Yang, M. Wang, X. W. Zhang, W. W. Wang and Paul K. Chu, Origin of flat-band voltage sharp roll-off in metal gate/high-k/ultrathin SiO2/Si pMOS stacks: Applied Physics Letters 97 (2010) 132908;

5. Z. C. Yang, A. P. Huang*, L. Yan, Z. S. Xiao, X. W. Zhang, Paul K. Chu and W. W. Wang, Role of interface dipole in metal gate/high-k effective work function modulation by aluminum incorporation: Applied Physics Letters 94 (2009) 252905;

6. A. P. Huang, Z. S. Xiao, X. Y. Liu, L. Wang and P. K. Chu, Role of fluorine in plasma nitridated ZrO2 thin films under irradiation, Applied Physics Letters, 93 (2008) 122907-1–122907-3；

7. A. P. Huang and P. K. Chu, Interfacial Compound Suppression and Dielectric Properties Enhancement of F-N-codoped ZrO2 Thin Films, Applied Physics Letters, 90 (2007) 082906-1–082906-3；

8. A. P. Huang, Paul K. Chu and X. L. Wu, Enhanced Electron Field Emission from Oriented Columnar AlN and Mechanism, Applied Physics Letters, 88(2006) 251103-1-251103-3；

9. A. P. Huang, S. L. Xu, M. K. Zhu, B. Wang, H. Yan and T Liu, Crystallization control of sputtered Ta2O5 thin films by substrate bias, Applied Physics Letters, 83 (2003) 3278-3280；

10. A. P. Huang, L. Wang, J. B. Xu and P. K. Chu, Plasma Nitridated High-k Polycrystalline Induced by Electron Irradiation, Nanotechnology, 17 (2006) 4379-4383；

11. A. P. Huang and P. K. Chu, Improvement of Interfacial and Dielectric Properties of Sputtered Ta2O5 Thin Films by Substrate Biasing and the Underlying Mechanism, Journal of Applied Physics, 97 (2005) 114106-1–114106-5；

12. A. P. Huang, S. L. Xu, M. K. Zhu, G.H. Li, T. Liu, B. Wang, and H. Yan “Oriented growth of Ta2O5 films induced by substrate bias” Journal of Crystal Growth 2003, 255: 145~149;

13. A. P. Huang, G. J. Wang, S.L. Xu, M. K. Zhu, G. H. Li, B. Wang, H. Yan “Oriented AlN films prepared with solid AlCl3 source by bias assisted Cat-CVD” Materials Science and Engineering B 2004, 107:161~165;

14. A. P. Huang, and Paul K. Chu “Crystallization Improvement of Ta2O5 Thin Films by Addition of Water Vapor” Journal of Crystal Growth 2005, 274: 73~77;

15. A. P. Huang, Paul K. Chu, H. Yan, and M. K. Zhu “Dielectric Properties Enhancement of ZrO2 Thin Films Induced by Substrate Biasing” J. Vac. Sci. Technol. B 2005, 23(2): 566~569;

16. A. P. Huang, Ricky K. Y. Fu, Paul K. Chu，L. Wang, W. Y. Cheung, J. B. Xu, and S. P. Wong “Plasma Nitridation and Microstructure of High-k ZrO2 Thin Films Fabricated by Cathodic Arc Deposition” J. Crystal Growth 2005, 277: 422~427;

17. A. P. Huang, and Paul K. Chu “Microstructural Improvement of Sputtered ZrO2 Thin Films by Substrate biasing” Materials Science and Engineering B 2005, 121(3): 244~247;

18. A. P. Huang, and Paul K. Chu “Characteristics of Interface between Ta2O5 Thin Film and Si (100) Substrate” Surface and Coatings Technology 2005, 200: 1714~1718;

19. A. P. Huang, Paul K. Chu L. Wang, W. Y. Cheung, J. B. Xu, and S. P. Wong “Fabrication of Rutile TiO2 Thin Films by Low-Temperature, Bias-Assisted Cathodic Arc Deposition and Their Dielectric Properties” J. Mater. Res. 2006, 21(4):

20. A. P. Huang, Z. F. Di, Paul K. Chu “Microstructure and Visible-Photoluminescence of Titanium Dioxide Thin Films Fabricated by Dual Cathodic Arc and Nitrogen Plasma Deposition” Surface and Coatings Technology 2007, 201: 4897~4900;

21. A. P. Huang, Z. F. Di, Ricky K. Y. Fu, Paul K. Chu “Improvement of Interfacial and Microstructure Properties of High-k ZrO2 Thin Films Fabricated by Filtered Cathodic Arc Deposition Using Nitrogen Incorporation” Surface and Coatings Technology 2007, 201:8282-8285;

22. A. P. Huang and P. K. Chu, “Thermal Stability and Electrical Properties of High-k Gate Dielectric Materials”, Proceedings 6th International Workshop on Junction Technology (IWJT), Paper 5.4, 2006: 214~ 219(Invited talk).