北京工業(yè)大學

基本情況：

鄧軍，男，1969年出生，博士，副研究員，碩士生導師。

2006年于北京工業(yè)大學電子信息與控制工程學院獲得工學博士學位。主要在半導體光電子器件領(lǐng)域從事光電探測器件與材料外延制備的科研和教學工作。工作期間，先后參與、承擔國家973、國家863項目、北京市科委、教委項目以及企業(yè)科研項目十幾項，在國內(nèi)外會議、期刊發(fā)表學術(shù)論文四十余篇。

研究方向：

1、III-V族半導體功能材料的外延制備技術(shù)

2、半導體光電子器件研究和制備

3、半導體光電子器件的應用

在研的課題：

1、GaAs/AlGaAs多量子阱中長波紅外探測器陣列器件

2、InAs/GaSbII類超晶格雙色紅外探測器研究

3、InP基焦平面陣列探測器研制

4、高增益垂直腔面發(fā)射激光器的研制

5、石墨烯材料與器件

代表性論文：

1.Jun Deng, Guangdi Shen, Peng Lian, Songyan Liu, Lan Li, Yanli Shi, Junmiao Wu, Nanhui Niu, Deshu Zou，Optoelectronic transport mechanism from subband infrared absorption and tunneling regeneration，Current Applied Physics 2002 2:373-378

2.Deng jun、Wang bin、Han jun、Li jianjun、Shen guangdi，GaAs/AlGaAs Quantum Well Infrared Photodetector with Low Noise，Opto-Electronics Letters, 2005,Vol.1,No.1 37－39

3.Ma Nan, Deng Jun, Li Dingyuan, Shi Yanli, Shen Guangdi. Accessing the epitaxy structure of quantum well infrared photodetectors by photoluminescence measurement. International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications. Proceedings of the SPIE. 2009, 7383:738332-738332-8

4.Dingyuan Li, Jun Deng, Nan Ma, et al,Analysis of carriers transport of novel GaAs/AlGaAs quantum well infrared Photodetectors, International Symposium on Photoelectronic Detection and Imaging 2009: Advances in Infrared Imaging and Applications. Proceedings of the SPIE. 2009, 7383:738310-738310-8

5.Shaojun Luo，Jun Deng，Jianjun Li，Linchun Gao，Rui Chen，Jun Han，The influence of the growth temperature on the doping characteristics of P-GaP layers in AlGaInP red LED，Proceedings 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics (AOM 2010)
 
6.Lin-chun Gao，Jun Deng，Shao-jun Luo，Rui Chen1，Jian-jun Li，Jun Han，Study of P type doping in AlGaInP cladding layer of high brightness red LED，Proceedings 2010 OSA-IEEE-COS Advances in Optoelectronics and Micro/Nano-Optics (AOM 2010)
 
7.YANG Li-peng, DENG Jun*, SHI Yan-li, CHEN Yong-yuan, WU Bo，F(xiàn)abrication and performance of InAs/GaSb type-II superlattices Mid-wavelength infrared detectors，Proc.of SPIE Vol. 8907, 890741，International Symposium on Photoelectronic Detection and Imaging 2013: Infrared Imaging and Applications

聯(lián)系方式：

電話：01067392503-817

郵箱：dengsu@bjut.edu.cn