湖南大學(xué)

李洪來，博士，碩士生導(dǎo)師，助理教授，岳麓學(xué)者

聯(lián)系方式：lihonglai@hnu.edu.cn

熱忱歡迎對前沿納米交叉課題感興趣的具有材料、化學(xué)、物理背景的學(xué)生加入團隊!

基本信息

李洪來，男，1989年生，主要從事二維半導(dǎo)體納米材料帶隙調(diào)控及其光電性能研究，運用化學(xué)氣相沉積系統(tǒng)(CVD)、高分辨透射電鏡(HRTEM)、Raman光譜儀、熒光光譜儀(PL)、電子束曝光系統(tǒng)(EBL)等多種制備分析手段研究各種半導(dǎo)體生長規(guī)律、原子結(jié)構(gòu)、光電子學(xué)性能等。目前已在Nat. Nanotechnol.、Chem. Soc. Rev.、J. Am. Chem. Soc.、ACS Nano、Nano Lett.、Nanoscale等國際權(quán)威學(xué)術(shù)期刊發(fā)表相關(guān)SCI論文(且多為ESI高被引論文)24篇，獲得專利2項，并獲2017年湖南省自然科學(xué)一等獎(排名第三)。

代表性論文：

(1) Honglai Li, Xiao Wang, Xiaoli Zhu, Xiangfeng Duan, Anlian Pan* Composition modulation in one-dimensional and two-dimensional chalcogenide semiconductor nanostructures. Chem. Soc. Rev. 2018,47, 7504-7521 (一區(qū)，IF=40.2)

(2) Honglai Li, Hongjun Liu, Linwei Zhou, et al. Strain-Tuning Atomic Substitution in Two-Dimensional Atomic Crystals. ACS Nano, 2018, 12: 4853–4860(一區(qū)，IF=13.7)

(3) Honglai Li, Xueping Wu, Hongjun Liu, et al. Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution. ACS Nano, 2017, 11(1): 961–967(一區(qū)，IF=13.7)

(4) Honglai Li, Qinglin Zhang, Xidong Duan, et al. Lateral growth of composition graded atomic layer MoS2(1−x)Se2x nanosheets. J. Am. Chem. Soc., 2015, 137(16): 5284–5287(一區(qū)，IF=14.36)

(5) Honglai Li, Xidong Duan, Xueping Wu, et al. Growth of alloy MoS2xSe2(1−x) nanosheets with fully tunable chemical compositions and optical properties. J. Am. Chem. Soc., 2014, 136(10): 3756–3759(一區(qū)，IF=14.36)

(6) Xueping Wu#, Honglai Li#, Hongjun Liu#, et al. Spatially composition-modulated two-dimensional WS2xSe2(1-x) nanosheets. Nanoscale, 2017, 9, 4707–4712(并列第一作者，一區(qū)，IF=7.37)

(7) Xidong Duan, Chen Wang, Jonathan C. Shaw, Rui Cheng, Yu Chen, Honglai Li, et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol., 2014, 9: 1024–1030(Nature子刊，IF=38.99)

(8) Xinliang Chen, Honglai Li, Zhaoyang Qi, et al. Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets. Nanotechnol., 2016, 27: 505602

(9) Yaqin Zou, Honglai Li, Pinyun Ren, et al. Microphotoluminescence of individual ZnSe nanoribbons. Mater. Lett., 2014, 129: 118–121

(10) Cuihuan Ge, Honglai Li, Xiaoli Zhu*, Anlian Pan*. Band gap engineering of atomically thin two-dimensional semiconductors. Chin. Phys. B, 2017, 26(3): 034208

(11) Jianzhe Liu, Congxin Xia, Honglai Li, Anlian Pan*. High on/off ratio photosensitive field effect transistors based on few layer SnS2. Nanotechnol., 2016, 27: 34LT01

(12) Yankun Yang, Tiefeng Yang, Honglai Li, et al. High performance photodetectors based on high quality InP nanowires. Chin. Phys. B, 2016, 25(11): 118106

學(xué)術(shù)成果

代表性論文及著作：

(1) Honglai Li, Xiao Wang, Xiaoli Zhu, Xiangfeng Duan, Anlian Pan* Composition modulation in one-dimensional and two-dimensional chalcogenide semiconductor nanostructures. Chem. Soc. Rev. 2018,47, 7504-7521 (一區(qū)，IF=40.2)

(2) Honglai Li, Hongjun Liu, Linwei Zhou, et al. Strain-Tuning Atomic Substitution in Two-Dimensional Atomic Crystals. ACS Nano, 2018, 12: 4853–4860(一區(qū)，IF=13.7)

(3) Honglai Li, Xueping Wu, Hongjun Liu, et al. Composition-Modulated Two-Dimensional Semiconductor Lateral Heterostructures via Layer-Selected Atomic Substitution. ACS Nano, 2017, 11(1): 961–967(一區(qū)，IF=13.7)

(4) Honglai Li, Qinglin Zhang, Xidong Duan, et al. Lateral growth of composition graded atomic layer MoS2(1−x)Se2x nanosheets. J. Am. Chem. Soc., 2015, 137(16): 5284–5287(一區(qū)，IF=14.36)

(5) Honglai Li, Xidong Duan, Xueping Wu, et al. Growth of alloy MoS2xSe2(1−x) nanosheets with fully tunable chemical compositions and optical properties. J. Am. Chem. Soc., 2014, 136(10): 3756–3759(一區(qū)，IF=14.36)

(6) Xueping Wu#, Honglai Li#, Hongjun Liu#, et al. Spatially composition-modulated two-dimensional WS2xSe2(1-x) nanosheets. Nanoscale, 2017, 9, 4707–4712(并列第一作者，一區(qū)，IF=7.37)

(7) Xidong Duan, Chen Wang, Jonathan C. Shaw, Rui Cheng, Yu Chen, Honglai Li, et al. Lateral epitaxial growth of two-dimensional layered semiconductor heterojunctions. Nat. Nanotechnol., 2014, 9: 1024–1030(Nature子刊，IF=38.99)

(8) Xinliang Chen, Honglai Li, Zhaoyang Qi, et al. Synthesis and optoelectronic properties of quaternary GaInAsSb alloy nanosheets. Nanotechnol., 2016, 27: 505602

(9) Yaqin Zou, Honglai Li, Pinyun Ren, et al. Microphotoluminescence of individual ZnSe nanoribbons. Mater. Lett., 2014, 129: 118–121

(10) Cuihuan Ge, Honglai Li, Xiaoli Zhu*, Anlian Pan*. Band gap engineering of atomically thin two-dimensional semiconductors. Chin. Phys. B, 2017, 26(3): 034208

(11) Jianzhe Liu, Congxin Xia, Honglai Li, Anlian Pan*. High on/off ratio photosensitive field effect transistors based on few layer SnS2. Nanotechnol., 2016, 27: 34LT01

(12) Yankun Yang, Tiefeng Yang, Honglai Li, et al. High performance photodetectors based on high quality InP nanowires. Chin. Phys. B, 2016, 25(11): 118106